• Top
  • News&Topics
  • Atmospheric Pressure Chemical Vapor Deposition Growth of Graphene

News&Topics

Apr.16, 2013

Atmospheric Pressure Chemical Vapor Deposition Growth of Graphene

【Date】
April 17  12:00~12:50

【Speaker】
Tomoko Borsa, Tzu-Min Ou, and Bart Van Zeghbroeck
Colorado Nanofabrication Laboratory
Department of Electrical, Computer and Energy Engineering
University of Colorado at Boulder
 
【Abstract】 
Graphene is an exciting new carbon material because of its two-dimensional nature and unique mechanical and electrical properties. However, there is still much room for improvement when it comes to methods for growing graphene, such as chemical vapor deposition (CVD) on metal substrates. Copper is a widely used catalyst for graphene synthesis since it produces a single layer graphene, while other metals tend to grow films with a few layers. With the atmospheric pressure chemical vapor deposition (APCVD) method, a single layer graphene composed of large grains can be obtained if process parameters are carefully controlled. Our recent graphene research activities can be divided into two different aspects. The first one is related to the APCVD synthesis and its process improvement. The second is about an establishment of characterization method, which can provide a reasonable feedback loop in order to optimize the APCVD process. Fabricating and testing graphene field effect transistors (FETs) is a practical way to assess the quality of a given sample. In the fabrication process, a graphene film is first transferred onto a thin silicon dioxide covered silicon wafer by the application and electrochemical removal of poly(methyl methacrylate) (PMMA). Then, the electrodes are patterned using optical lithography and the evaporative metal deposition/lift-off process. Four-point-probe and transistor measurements are performed in order to assess the electrical characteristics of the graphene sample. 

page up