Electronics and Information Engineering Laboratories
Advanced Electron Devices Laboratory
Basic Information
Staff |
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Outline |
Research and development of small-sized, ultra-high speed devices for energy conservation society Electronic products indispensable to life are composed of semiconductor devices, and the devices are becoming increasingly difficult in high integration, power-saving and high speed operation. To overcome this, Advanced Electron Devices Laboratory investigates semiconductor materials, devices and application technologies |
Research Themes |
Compound semiconductor heterojunction power devices |
Activities
Research background
AlGaN/GaN high electron mobility transistor (HEMT) on GaN substrate under test (left: transparent!), HEMT with side-gate (center) and drain current (ID) performances against side-gate voltage (VSG) for thicknesses of channel and C-doped buffer layers (right)
Research on compound semiconductor heterojunction power devices
Laser irradiation system for acceptor activation of Mg-doped GaN and resulted hole concentration against laser intensity
Research on ultra-low power consumption semiconductor devices and systems
For wireless power transfer and energy harvesting, there is a demand for high-performance devices that rectify from low voltage to high voltage with high efficiency. Current technology requires a large number of semiconductor devices, including control ICs. Advanced Electron Devices Laboratory is conducting research on a novel heterojunction diode that exhibits a low on-voltage using the results of the p-type GaN gate HEMT, and is developing a bridge circuit IC using this diode.
p-GaN gated anode diode (left), diode bridge & testing circuit (center) and full-wave rectification with input signal of 1.5 V and 0.18 V (right)