Growth and charcaterisation of semiconductor materials for solar cell applications

[Post-Doctoral Fellow] Boussairi Bouzazi

Basic Information

Boussairi Bouzazi

Degree

Doctor

Date of birth

1977/10/15

Laboratory Name

Research Center for Smart Energy Technology / Semiconductor Laboratory

Research Fields

Growth and charcaterisation of semiconductor materials for solar cell applications

Keywords

GaAsN, chemical beam epitaxy, DLTS, recombination centers, background doping.

Academic Background

Toyota Technological Institute, Future Industry Oriented basic materials [2011]

Work History

Principal Engineer, Ministry of Commerce and Tourism of Tunisia (2002年04月01日-2007年09月16日)

Research Themes

Dilute nitride for ultra-high efficiency tandem solar cells

Original Papers

[Academic Year]2011
[Articles]Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
[Author]Boussairi Bouzazi、 Nobuaki Kojima、 Yoshio Ohshita、 Masafumi Yamaguchi
[Date of Issue]02/20/2011
[journal]JJAP


[Academic Year]2011
[Articles]Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
[Author]Boussairi Bouzazi、Jong-Han Lee, Hidetoshi Suzuki, Nobuaki Kojima、 Yoshio Ohshita、 Masafumi Yamaguchi
[Date of Issue]05/20/2011
[journal]JJAP


[Academic Year]2010
[Articles]Double carriers pulse DLTS for the characterization of Electron-Hole Recombination Process in GaAsN Grown by Chemical Beam Epitaxy
[Author]Boussairi Bouzazi、Hidetoshi Suzuki, Nobuaki Kojima、 Yoshio Ohshita、 Masafumi Yamaguchi
[Date of Issue]11/30/2010
[journal]Physica B


[Academic Year]2010
[Articles]Relationship between a N-related hole trap and ionized acceptors density in p-type GaAsN grown by chemical beam epitaxy
[Author]Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima、 Yoshio Ohshita、 Masafumi Yamaguchi
[Date of Issue]10/25/2010
[journal]physica status solidi (C)


[Academic Year]2010
[Articles]Properties of a N-related hole trap like acceptor state in p-type GaAsN grown by chemical beam epitaxy
[Author]Boussairi Bouzazi、Hidetoshi Suzuki, Nobuaki Kojima、 Yoshio Ohshita、 Masafumi Yamaguchi
[Date of Issue]12/20/2010
[journal]JJAP

Books

[Academic Year]2011
[Books]Solar Cells - New Aspects and Solutions
[Author/Editor]Boussairi Bouzazi、 Hidetoshi Suzki、 Nobuaki Kojima、 Yoshio Ohshita、 Masafumi Yamaguchi
[Date of Issue]2011/10

Conference Presentations

[Academic Year]2012
[Academic Society]38th IEEE Photovoltaic Specialists Conference(PVSC38)
[Speakers]Boussairi Bouzazi、 Nobuaki Kojima、 Yoshio Ohshita、 Masafumi Yamaguchi
[Date of Presentation]2012/6/8


[Academic Year]2011
[Academic Society]21st International Photovoltaic Science and Engineering Conference (PVSEC-21)
[Speakers]Boussairi Bouzazi、 Nobuaki Kojima、 Yoshio Ohshita、 Masafumi Yamaguchi
[Date of Presentation]2011/12/1


[Academic Year]2011
[Academic Society]2011 International Conference on Solid State Devices and Materials (SSDM 2011)
[Speakers]Boussairi Bouzazi、 Nobuaki Kojima、 Yoshio Ohshita、 Masafumi Yamaguchi
[Date of Presentation]2011/9/28


[Academic Year]2011
[Academic Society]MIDGAP OVERLAPPING OF TWO OPPOSITE CARRIER TRAPS IN GaAsN GROWN BY CHEMICAL BEAM EPITAXY
[Speakers]Boussairi Bouzazi、 Nobuaki Kojima、 Yoshio Ohshita、 Masafumi Yamaguchi
[Date of Presentation]2011/6/30


[Academic Year]2011
[Academic Society]37th IEEE Photovoltaic Specialists Conference(PVSC37)
[Speakers]Boussairi Bouzazi、 Hidetoshi Suzuki、 Nobuaki Kojima、 Yoshio Ohshita、 Masafumi Yamaguchi
[Date of Presentation]2011/6/21

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