Electronics and Information Engineering Laboratories

Memory Engineering Laboratory

Basic Information


Professor Hiroyuki Awano / Associate Professor Kenji Tanabe


Creating new functional materials via spin control of nanostructures

Nanometer-sized spin materials, which enable electron spin control, are expected to lead to new functional devices. Our laboratory is committed to innovating spin metamaterials to develop ultra-low power petabyte memories(magnetic and/or optical) and to addressing global warming and other energy-related problems.

Research Themes

Petabyte stacked spin memories(SSMs),
Spin metamaterials solar cells
Optically assisted 3D magnetic recording
Optical petabyte memories


1 Sample preparation equipments
         UHV chamber with MBE (Molecular Beam Epitaxy) and Magnetron Sputtering
         UHV Ion Beam Sputtering and dry etcher
         PLD (Pulse Laser Deposition)

2  Nano Size Processing
      EB (Electron Beam) Lithigraphy
      FIB (Focused Ion Beam Processing

3  Heat Processing
      Induced heating anneal
      Lamp heating anneal

   4 Sample shape evaluation equipments
     SEM  (Scanning Electron Microscope )
     AFM  (Atomic Force Microscope )
     MFM  (Magnetic Force Microscope )
     Polarized-Optical Microscope with external field and focused Laser
     Optical Microscope (x100)

    5  Sample Characteristic Measurement equipments
     EDX (Energy Dispersive X-ray Fluorescence Spectrophotometer)
     VSM (Vibrating Sample Magnetometer) with superconducting magnet
      Hall Effect Measurement System                     
     VSM (Vibrating Sample Magnetometer) with electromagnet
     AGFM (Alternating Gradient Force Magnetometer )  
     Polar Kerr Curve Tracer (Perpendicular to the film)                               
     Magneto-Optical Kerr and Ellipticity Measurement System                      




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