Low-cost high-functionality semiconductor devices with high efficiency operation for the energy conservation society

[Professor] Naotaka Iwata

Basic Information

Naotaka Iwata

Degree

Doctor (Engineering)

Laboratory Name

Advanced Electron Devices Laboratory

Research Fields

Low-cost high-functionality semiconductor devices with high efficiency operation for the energy conservation society

Keywords

compound semiconductor, semiconductor devices, fabrication process, low energy consumption

E-mail Address

Academic Background

Doctor (Engineering), Universiy of Tsukuba (1999/3/25)

Work History

Professor, Toyota Technological Institute (2013/4-Present)
Manager, Renesas Electronics Corporation (2010/4/1-2013/3/31)
Manager, NEC Electronics Corporation (2006/4/1-2010/3/31)
Manager, NEC Compound Semiconductor Devices Corporation (2001/10/1-2006/3/31)
Researcher, NEC Corporation (1983/4/1-2001/9/30)

Membership of Academic Societies

Senior Member, IEEE (the Institute of Electrical and Electronics Engineers)
Senior Member, IEICE (the Institute of Electronics, Information, and Communication Engineers, Japan)
Member, JSAP (the Japan Society of Applied Physics)

Research Themes

Compound semiconductor heterojunction power devices
Compound semiconductor sensors with new functionality
Ultra-low energy consumption semiconductor devices and systems

Original Papers

[Academic Year] 2021
[Articles] High breakdown voltage of AlGaAs/GaAs/AlGaAs diode achieved by balanced charges considering residual carbon impurity in hole and electron channels
[Author] H. Ogawa, S. Kawata, and N. Iwata
[Date of Issue] 2021/4
[journal] Jpn. J. of Appl. Phys. Vol. 60, pp.041001-1-5

[Academic Year] 2020
[Articles] Effect of C- and Fe-doped GaN buffer on AlGaN/GaN HEMT performance on GaN substrate using side-gate modulation
[Author] M. E. Villamin, T. Kondo, and N. Iwata
[Date of Issue] 2021/3
[journal] Jpn. J. of Appl. Phys. Vol. 60, pp. SBBD17-1-8

[Academic Year] 2020
[Articles] High-selectivity dry etching for p-type GaN gate formation of normally-off operation high-electron-mobility transistor
[Author] N. Iwata and T. Kondo
[Date of Issue] 2020/10
[journal] Jpn. J. of Appl. Phys. Vol.60, pp. SAAD01-1-5

[Academic Year] 2019
[Articles] Effects of p-GaN gate structures and fabrication process on performances of normally-off AlGaN/GaN high electron mobility transistors
[Author] T. Kondo, Y. Akazawa, and N. Iwata
[Date of Issue] 2019/11
[journal] Jpn. J. Appl. Phys. Vol.59, pp. SAAD02-1-4

[Academic Year] 2017
[Articles] Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices
[Author] N. Kurose, K. Matsumoto, F. Yamada, T. M. Roffi, I. Kamiya, N. Iwata, and Y. Aoyagi
[Date of Issue] 2018/1
[journal] AIP Advances Vol.8, pp.15329-1-5

[Academic Year] 2014
[Articles] Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor
[Author] N. Kurose, N. Iwata, I. Kamiya, and Y. Aoyagi
[Date of Issue] 2014/12
[journal] AIP Advances Vol.4, pp.123007-1-7

Reviews

[Academic Year]2009
[Articles]GaAs Switch ICs for Cellular Phone Antenna Impedance Matching
[Author]N.Iwata, and M.Fujita
[Date of Issue]2009/3/19

Books

[Academic Year]2002
[Books]Microwave Technology Lecture Vol.6, "Integrated Circuit and Application," Chapter 3
[Author/Editor]N. Iwata
[Date of Issue]2002/6/25

Conference Presentations

[Academic Year] 2021
[Title] Two-step mesa p-GaN gated anode diode for low-power rectification applications
[Academic Society] 2021 International Conference on Solid State Devices and Materials (SSDM2021)
[Speakers] Y. Zhang and N. Iwata
[Date of Presentation] 2021/9/9

[Academic Year] 2021
[Title] High Breakdown Voltage InGaAs/AlGaAs/InGaAs Superjunction Devices with Modulation-Doping for On-Resistance Reduction
[Academic Society] 2021 International Conference on Solid State Devices and Materials (SSDM2021)
[Speakers] H. Ogawa and N. Iwata
[Date of Presentation] 2021/9/7

[Academic Year] 2020
[Title] P-GaN gated AlGaN/GaN diode for rectification applications
[Academic Society] the 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021)
[Speakers] S. Kawata, H. Kondo, Y. Zhang, and N. Iwata
[Date of Presentation] 2021/3/10

[Academic Year] 2020
[Title] Effect of side-gate modulation on AlGaN/GaN HEMTs on GaN substrates with different GaN channel and buffer thicknesses
[Academic Society] the 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021)
[Speakers] M. E. Villamin, and N. Iwata
[Date of Presentation] 2021/3/10

[Academic Year] 2020
[Title] Controlled activation of Mg dopant by laser irradiation for p-GaN formation
[Academic Society] the 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021)
[Speakers] R. Kamiya, T. Ichinose, Y. Zhang, N. Kurose, I. Kamiya, Y. Aoyagi, and N. Iwata
[Date of Presentation] 2021/3/10

Invited Lectures

[Academic Year]2013
[Lecture]Research and development of compound semiconductor heterojunction devices -application to mobile terminals and base stations for mobile communication systems- (in Japanese)
[Speakers]N. Iwata
[Date of Lecture]2013/9/24

Awards

[Academic Year]2004
[prize]The Unversity of Electro-Communications Alumni Prize
[Prize Winner]N. Iwata
[Award-Winning Date]2004/4/7

[Academic Year]2003
[prize]The Commendation by the Minister of Education, Culture, Sports, Science and Technology as a Person of Scientific and Technological Research Merits
[Prize Winner]N. Iwata
[Award-Winning Date]2003/4/17

[Academic Year]2002
[prize]The Ichimura Prizes in Industry-Meritorious Achievement Prize
[Prize Winner]N. Iwata and others
[Award-Winning Date]2002/4/26

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