2026
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[New!] Development of high-performance p-type nano-grained bulk Silicon-Germanium thermoelectric materials
R. Ishihara, M. Matsunami, T. Takeuchi
Mater. Trans., in press. -
[New!] Enhanced Near-Room-Temperature Thermoelectric Properties in Yb-Doped Off-Stoichiometry α-Cu2+xSe
A. K. R. Ang, S. Singh, K. Hirata, S. P. Chandrasekar, M. Matsunami, T. Takeuchi
ACS Appl. Electron. Mater. (2026), published online [11 pages]. -
[New!] Dopant size governs valence-band-edge splitting and hierarchical phonon scattering in Cu-and Ag-doped p-type ZnTe
Sochannao Machinao, Dilip Kumar Meena, Neeraja Athulya, Subash Chandra Bose Rapaka, Saurabh Singh, Tsunehiro Takeuchi, Tamanna Kumari, Jasa Ram, Ramesh Karuppannan
J. Phys. D: Appl. Phys. 59, 365501 (2026). -
[New!] Semiclassical thermoelectric transport in the disordered Dirac electron system Ag2Te
K. Kuga, K. Hirata, D. Goto, R. Ishihara, M. Matsunami, and T. Takeuchi
Phys. Rev. B 114, 154203 (2026) [6 pages]. -
[New!] Tailoring thermoelectric transport in (La, Sm)-doubly filled skutterudite thin films via controlled annealing
Cecilia Piscino, Anoop Divakaran, Pietro Manfrinetti, Tsunehiro Takeuchi, Cristina Artini, Paolo Mele, Giovanna Latronico
Mater. Chem. Phys. 368, 1330033 (2026). -
[New!] 高性能p型Si-Ge系ナノ粒子化バルク熱電材料の開発
石原崚伍,松波雅治, 竹内恒博
日本熱電学会誌, 早期公開 (2026) [10 pages]. -
Effect of the deposition temperature on the properties of MnFe2O4 thin films
A. Giribaldi, A. M. Divakaran, P. Maltoni, H. Rijckaert, G. Latronico, C. Piscino, M. A. Lopez de la Torre, K. Iida, C. Giordani, T. Takeuchi, D. Peddis, C. Artini, P. Mele
J. Alloy. Compd. 1074, 189111 (2026) [9 pages]. -
Geometric decoupling of thickness and thermal gradient in wearable thermoelectric generators via a stair-shaped architecture
Suresh Prasanna C, M. A. Ali, A. K. R. Ang, M. Matsunami, T. Takeuchi
Chem. Eng. J. 539, 177006 (2026) [11 pages]. -
Influence of transition-metal composition on anomalous Nernst effect in amorphous Tb–Fe–Co thin films
H. Imaeda, T. Takeuchi, H. Awano, K. Tanabe
J. Appl. Phys. Lett. 139, 093906 (2026) [11 pages]. -
Heat Flow Switching Device Working with the Latent-Heat-Induced Heat-Pumping Phenomenon
R. Toida, T. Maruchi, P. Lotfalinezhad, M. Adachi, T. Matsunaga, T. Fujita, K. Hirata, M. Matsunami, T. Takeuchi
Mater. Trans. 67, 149 (2026) [8 pages]. -
Development of an Electric Double-Layer Capacitor-Type Heat Flow Switching Device with Ag2S0.8Se0.2 as the Functional Electrode
R. Toida, P. Lotfalinezhad, M. Adachi, T. Matsunaga, T. Fujita, K. Hirata, M. Matsunami, T. Takeuchi
Mater. Trans. 67, 92 (2026) [7 pages].
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